High off-state breakdown voltage 60-nm-long-gate AlGaN/GaN heterostructure field-effect transistors with AlGaN back-barrier

Japanese Journal of Applied Physics

Volumn 48, Issue 9 Part 1, 2009, Pages 0945021-0945023

  Onojima, Norio ^a   Hirose, Nobumitsu ^a   Mimura, Takashi ^a,b   Matsui, Toshiaki ^a  

^a NATIONAL INSTITUTE OF INFORMATION AND COMMUNICATIONS TECHNOLOGY   (Japan)

^b FUJITSU LABORATORIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN; ALGAN/GAN HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS; BARRIER STRUCTURES; BREAKDOWN CHARACTERISTICS; BREAKDOWN VOLTAGE; DOUBLE-BARRIER STRUCTURES; DRAIN DISTANCE; GAIN CUTOFF FREQUENCY; HIGH CURRENTS; HIGH FREQUENCY DEVICES; HIGH-POWER;

CUTOFF FREQUENCY; DRAIN CURRENT; ELECTRIC BREAKDOWN; GALLIUM NITRIDE; MESFET DEVICES;

FIELD EFFECT TRANSISTORS;

EID: 77950083352     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.48.094502     Document Type: Article

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