Microwave performance of InAlAsSb/In0.35Ga0.65Sb/ InAlAsSb double heterojunction bipolar transistors

IEEE Electron Device Letters

Volumn 31, Issue 4, 2010, Pages 299-301

  Mairiaux, E ^a,b   Desplanque, L ^a   Wallart, X ^a   Zaknoune, M ^a  

^a Institut d'Electronique   (France)

^b ALCATEL THALES III V LAB   (France)

Author keywords

Heterojunction bipolar transistors (HBTs); High speed electronics; InGaSb

Indexed keywords

CURRENT GAIN CUTOFF FREQUENCY; DOUBLE HETEROJUNCTION BIPOLAR TRANSISTORS; HIGH-SPEED; HIGH-SPEED ELECTRONICS; MAXIMUM OSCILLATION FREQUENCY; MICROWAVE PERFORMANCE; RF PERFORMANCE;

BIPOLAR TRANSISTORS; CUTOFF FREQUENCY; GALLIUM; HETEROJUNCTIONS; SCATTERING PARAMETERS; SPEED;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 77950077838     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2010.2040241     Document Type: Article

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