6.2 Å Sb-based pN diodes for high frequency applications

IRMMW-THz2007 - Conference Digest of the Joint 32nd International Conference on Infrared and Millimetre Waves, and 15th International Conference on Terahertz Electronics

Volumn , Issue , 2007, Pages 855-856

  Champlain, James G ^a   Magno, Richard ^a   Park, Doewon ^a   Newman, Harvey S ^a   Boos, J Brad ^a  

^a NAVAL RESEARCH LABORATORY   (United States)

Author keywords

Diodes; Heterojunction bipolar transistors; High speed electronics; P n heterojunctions

Indexed keywords

BASE-COLLECTOR JUNCTIONS; BREAKDOWN VOLTAGE; COMMON EMITTER; COMMON-EMITTER CURRENT GAIN; HIGH-FREQUENCY APPLICATIONS; HIGH-SPEED ELECTRONICS; NARROW BAND GAP; P-N DIODE; P-N HETEROJUNCTIONS; P-TYPE; REVERSE LEAKAGE CURRENT; SATURATION CURRENT DENSITIES; SEMI-INSULATING GAAS; WIDE BAND GAP;

BIPOLAR TRANSISTORS; CURRENT VOLTAGE CHARACTERISTICS; DIODES; ENERGY GAP; GALLIUM; HETEROJUNCTIONS; MILLIMETER WAVES; TERAHERTZ WAVES;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 77950096215     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

1. B. R. Bennett, R. Magno, J. B. Boos, W. Kruppa, and M. G. Ancona, "Antimonide-based compound semiconductors for electronics devices: a review," Solid-State Electronics, vol. 49, pp. 1875-1895, 2005.
2. N. A. Papanicolaou, B. R. Bennett, J. B. Boos, D. Park, and R. Bass, "Sb-based HEMTs with a InAlSb/InAs heterojunction," Electronics Letters, vol. 41, pp. 1088-1089, 2005.
3. W. R. Deal, R. Tsai, M. D. Lange, J. B. Boos, B. R. Bennett, and A. Gutierrez, "A W-Band InAs/AlSb low-noise/low-power amplifier," IEEE Microwave and Wireless Components Letters, vol. 15, pp. 208-210, 2005.
4. R. Magno, E. R. Glaser, B. P. Tinkham, J. G. Champlain, J. B. Boos, and M. G. Ancona, "Narrow bandgap InGaSb, InAlAsSb alloys for electronic devices," Journal of Vacuum Science and Technology B, vol. 24, pp. 1622-1625, 2006.
5. J. B. Boos, B. R. Bennett, R. Magno, N. A. Papanicolaou, M. G. Ancona, J. G. Champlain, H. S. Newman, W. Kruppa, D. Park, B. D. Weaver, P. M. Campbell, R. Bass, E. R. Glaser, B. V. Shanabrook, R. Tsai, W. R. Deal, M. G. Lange, D. Sawdai, A. Gutierrez, J. M. Yang, and R. Lai, "Sb-based heterostructure device technology for high-speed, low-power applications," presented at 7th Topical Workshop on Heterostructure Microelectronics (TWHM), Kisarazu, Chiba, Japan, 2007.