Selective wet chemical etching of GaInSb and AlInSb for 6.25 Å HBT fabrication

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 2008, Pages

  Mairiaux, E ^a,b   Desplanque, L ^a   Wallart, X ^a   Dambrine, G ^a   Zaknoune, M ^a  

^a INSTITUT D ELECTRONIQUE   (France)

^b NOKIA RESEARCH CENTER   (United States)

Author keywords

AlInSb; Antimony; GaInSb; HBT; Wet chemical etching

Indexed keywords

ALINSB; ETCH RATES; GAINSB; HBT; RATE-LIMITING STEPS; SELECTIVE WET ETCHING; SMOOTH SURFACE; TARTARIC ACIDS; WET CHEMICAL ETCHING;

ACIDS; ACTIVATION ENERGY; ANTIMONY; GALLIUM ALLOYS; HYDROCHLORIC ACID; INDIUM; INDIUM PHOSPHIDE;

WET ETCHING;

EID: 70149113041     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICIPRM.2008.4702971     Document Type: Conference Paper

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