Optical characterization of In 0.27Ga 0.73Sb and Inx Al 1-xAs ySb 1-y epitaxial layers for development of 6.2-Å -based heterojunction bipolar transistors

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 24, Issue 3, 2006, Pages 1604-1606

  Glaser, E R ^a   Magno, R ^a   Shanabrook, B V ^a   Tischler, J G ^a  

^a NAVAL RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND EDGE RECOMBINATION; CRYSTALLINE QUALITY; LOW TEMPERATURE PHOTOLUMINESCENCE; OPTICAL CHARACTERIZATION;

CRYSTALLINE MATERIALS; EPITAXIAL GROWTH; HETEROJUNCTION BIPOLAR TRANSISTORS; LOW TEMPERATURE EFFECTS; MOLECULAR BEAM EPITAXY; OPTICAL PROPERTIES; PHOTOLUMINESCENCE;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 33744795985     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2192532     Document Type: Article

References (8)

1. R. Magno, in Proceedings of the IEEE Lester Eastman Conference on High Performance Devices 2002, edited by, R. E. Leoni III, (IEEE, Piscataway, NJ, 2003), pp. 288-296.
2. R. Magno, Electron. Lett. 41, 370 (2005).
3. R. Magno, E. R. Glaser, B. P. Tinkham, J. G. Champlain, J. B. Boos, M. G. Ancona, and P. M. Cambell, J. Vac. Sci. Technol. B (theseproceedings).
4. SIMS measurements were performed by Charles Evans and Associates, West.
5. D. Auvergne, J. Camassel, H. Mathieu, and A. Joullie, J. Phys. Chem. Solids 35, 133 (1974).
6. G. Birdwell, R. Magno, and E. R. Glaser (unpublished).
7. I. Vurgaftman, J. R. Meyer, and L. R. Ram-Mohan, J. Appl. Phys. 89, 5815 (2001).
8. T. H. Glisson, J. R. Hauser, M. A. Littlejohn, and C. K. Williams, J. Electron. Mater. 7, 1 (1978).