Narrow band gap InGaSb, InAlAsSb alloys for electronic devices

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 24, Issue 3, 2006, Pages 1622-1625

  Magno, R ^a   Glaser, E R ^a   Tinkham, B P ^a   Champlain, J G ^a   Boos, J B ^a   Ancona, M G ^a   Campbell, P M ^a  

^a NAVAL RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT GAIN; ELECTRONIC DEVICES; NARROW BAND GAP; TERNARY INGASB ALLOYS;

ELECTRIC CURRENT MEASUREMENT; HETEROJUNCTION BIPOLAR TRANSISTORS; INDIUM ALLOYS; MICROELECTRONICS; MOLECULAR BEAM EPITAXY; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; TERNARY SYSTEMS;

ELECTRONIC EQUIPMENT;

EID: 33744792940     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2201448     Document Type: Article

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