Low resistance, unannealed ohmic contacts to n-type InAs 0.66Sb0.34

Electronics Letters

Volumn 43, Issue 23, 2007, Pages 1315-1317

  Champlain, J G ^a   Magno, R ^a   Boos, J B ^a  

^a NAVAL RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CONDUCTION BANDS; ELECTRIC RESISTANCE; ELECTRON MOBILITY; FERMI LEVEL; OHMIC CONTACTS; PLATINUM; TITANIUM;

CONTACT RESISTANCES;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 36048972013     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20072224     Document Type: Article

References (14)

1. Papanicolaou, N.A., Bennett, B.R., Boos, J.B., Park, D., and Bass, R.: ' Sb-based HEMTs with InAlSb/InAs heterojunction ', Electron. Lett., 2005, 41, p. 1088-1089 10.1049/el:20052105 0013-5194
2. Deal, W.R., Tsai, R., Lange, M.D., Boos, J.B., Bennett, B.R., and Gutierrez, A.: ' A W-band InAs/AlSb low-noise/low-power amplifier ', IEEE Microw. Wirel. Compon. Lett., 2005, 15, p. 208-210 10.1109/LMWC.2005.845691 1531-1309
3. Magno, R., Glaser, E.R., Tinkham, B.P., Champlain, J.G., Boos, J.B., and Ancona, M.G.: ' Narrow bandgap InGaSb, InAlAsSb alloys for electronic devices ', J. Vacuum Sci. Technol. B, 2006, 24, p. 1622-1625
4. 0.3 HEMTs for low voltage high-frequency applications ', Int. Semiconductor Device Research Symp., Washington, DC, USA, 2003
5. Kruppa, W., Boos, J.B., Bennett, B.R., and Tinkham, B.P.: ' Low-frequency noise characteristics of AlSb/InAs HEMTs ', Solid-State Electron., 2004, 48, p. 2078-2084 0038-1101
6. Magno, R., Boos, J.B., Campbell, P.M., Bennett, B.R., Glaser, E.R., Tinkham, B.P., Ancona, M.G., Hobart, K.D., Park, D., and Papanicolaou, N.A.: ' InAlAsSb/InGaSb double heterojunction bipolar transistors ', Electron. Lett., 2005, 41, p. 370-371 10.1049/el:20058107 0013-5194
7. Cavus, A., Sandhu, R., Monier, C., Pascua, D., Cox, C., Poust, B., Hsing, R., Noori, R., Hayashi, S., Goorsky, M., and Gutierrez-Aitken, A.: ' Metamorphic 6.0 Å narrow band gap HBT technology on InP substrates ', Int. Conf. on Indium Phosphide and Related Materials, Princeton, NJ, USA, 2006
8. Marlow, G.S., and Das, M.B.: ' The effects of contact size and non-zero metal resistance on the determination of specific contact resistance ', Solid-State Electron., 1982, 25, p. 91-94 10.1016/0038-1101(82)90036-3 0038-1101
9. Mead, C.A., and Spitzer, W.G.: ' Fermi level position at metal-semiconductor interfaces ', Phys. Rev., 1964, 134, p. A713-716 0031-899X
10. 0.73Sb ', J. Vacuum Sci. Technol. B, 2006, 24, p. 2388-2390
11. Stareev, G., and Künzel, H.: ' Tunneling behaviour of extremely low resistance nonalloyed Ti/Pt/Au contacts to n(p)-InGaAs and n-InAs/InGaAs ', J. Appl. Phys., 1993, 74, p. 7592-7595 0021-8979
12. Robinson, J.A., and Mohney, S.E.: ' An improved In-based ohmic contact to n-GaSb ', Solid-State Electron., 2004, 48, p. 1667-1672 10.1016/j.sse.2004.02. 022 0038-1101
13. Robinson, J.A., and Mohney, S.E.: ' A low-resistance, thermally stable ohmic contact to n-GaSb ', J. Appl. Phys., 2005, 98, p. 033703 0021-8979
14. +-InAsSb/n-GaSb contacts ', Semicond. Sci. Technol., 2006, 21, p. 1274-1277 10.1088/0268-1242/21/9/011 0268-1242