Structural property of m-plane ZnO epitaxial film grown on LaAlO3 (1 1 2) substrate

Journal of Crystal Growth

Volumn 312, Issue 8, 2010, Pages 1179-1182

  Wang, Wei Lin ^a   Ho, Yen Teng ^a   Chiu, Kun An ^a   Peng, Chun Yen ^a   Chang, Li ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

A1. Defects; A3. m plane ZnO; A3. Transmission electron microscopy; B1. LaAlO3

Indexed keywords

A3. TRANSMISSION ELECTRON MICROSCOPY; B1. LAALO3; BASAL STACKING FAULTS; CROSS SECTION; M-PLANE; ORIENTATION RELATIONSHIP; PULSED LASER; TEM; THREADING DISLOCATION; XRD; ZNO; ZNO EPITAXIAL FILMS;

CRYSTAL GROWTH; DEFECTS; ELECTRONS; EPITAXIAL FILMS; HOLOGRAPHIC INTERFEROMETRY; LANTHANUM ALLOYS; PULSED LASER DEPOSITION; PULSED LASERS; SCANNING ELECTRON MICROSCOPY; STACKING FAULTS; SULFUR COMPOUNDS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS;

ZINC OXIDE;

EID: 77949852967     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2009.12.050     Document Type: Article

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