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Volumn 311, Issue 7, 2009, Pages 2042-2045
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Incorporation sites and luminescence characterizations of Er-doped GaN grown by molecular beam epitaxy
a
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Author keywords
A1. Doping; A2. Single crystal growth; A3. Molecular beam epitaxy; B1. Nitrides; B1. Rare earth compounds; B2. Semiconducting III V materials
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Indexed keywords
CORUNDUM;
CRYSTAL GROWTH;
CRYSTALLIZATION;
DOPING (ADDITIVES);
GALLIUM ALLOYS;
GALLIUM NITRIDE;
GRAIN BOUNDARIES;
LIGHT;
LUMINESCENCE;
MOLECULAR BEAM EPITAXY;
MOLECULAR BEAMS;
MOLECULAR DYNAMICS;
RARE EARTH COMPOUNDS;
RUTHERFORD BACKSCATTERING SPECTROSCOPY;
SEMICONDUCTING GALLIUM;
SEMICONDUCTOR GROWTH;
SEMICONDUCTOR QUANTUM WIRES;
SULFUR COMPOUNDS;
X RAY DIFFRACTION ANALYSIS;
A1. DOPING;
A2. SINGLE-CRYSTAL GROWTH;
A3. MOLECULAR BEAM EPITAXY;
B1. NITRIDES;
B1. RARE-EARTH COMPOUNDS;
B2. SEMICONDUCTING III-V MATERIALS;
ERBIUM;
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EID: 63349084976
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/j.jcrysgro.2008.12.007 Document Type: Article |
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Times cited : (8)
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References (12)
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