Influence of the AlGaN buffer layer on the biaxial strain of GaN epilayers grown on 6H-SiC (0001) by molecular-beam epitaxy

Journal of Applied Physics

Volumn 97, Issue 1, 2005, Pages

  Jeganathan, K ^a   Shimizu, M ^a   Okumura, H ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BIAXIAL STRAIN; CONDUCTING BUFFERS; STRAIN GRADIENT; SURFACE RECONSTRUCTION;

DESORPTION; GALLIUM NITRIDE; MOLECULAR BEAM EPITAXY; NUCLEATION; ORGANIC SOLVENTS; STRAIN; SUBSTRATES; X RAY DIFFRACTION;

ALUMINUM COMPOUNDS;

EID: 19944431205     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1826219     Document Type: Article

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