Spectroscopic studies of Er-centers in MOCVD grown GaN layers highly doped with Er

Materials Science and Engineering: B

Volumn 146, Issue 1-3, 2008, Pages 193-195

  Makarova, K ^a   Stachowicz, M ^a   Glukhanyuk, V ^a   Kozanecki, A ^a   Ugolini, C ^b   Lin, J Y ^b   Jiang, H X ^b   Zavada, J ^c  

^a INSTITUTE OF PHYSICS   (Poland)

^b KANSAS STATE UNIVERSITY   (United States)

^c U S ARMY RESEARCH OFFICE   (United States)

Author keywords

Erbium; Gallium nitride; Photoluminescence; Site selective spectroscopy

Indexed keywords

EXCITATION ENERGY; GALLIUM NITRIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PARAMAGNETIC RESONANCE; PHOTOLUMINESCENCE; SEMICONDUCTOR DOPING;

ER IONS; EXCITATION MEASUREMENTS; SITE-SELECTIVE SPECTROSCOPY;

ERBIUM COMPOUNDS;

EID: 37349083102     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2007.07.032     Document Type: Article

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