Laser optical gas sensor by photoexcitation effect on refractive index

Applied Optics

Volumn 49, Issue 9, 2010, Pages 1563-1573

  Lim, Geunsik ^a   DeSilva, Upul P ^b   Quick, Nathaniel R ^c   Kar, Aravinda ^a  

^a UNIVERSITY OF CENTRAL FLORIDA   (United States)

^b SIEMENS POWER GENERATION   (United States)

^c Applicote Associates LLC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; CARBON; CARBON DIOXIDE; CHEMICAL SENSORS; DOPING (ADDITIVES); FABRICATION; GAS DETECTORS; GASES; NITROGEN; OPTICAL PROPERTIES; PHOTOEXCITATION; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; SEMICONDUCTOR LASERS; SILICON CARBIDE; WIDE BAND GAP SEMICONDUCTORS;

CRYSTALLINE SILICONS; DOPANT ENERGY LEVELS; HIGH TEMPERATURE; INTERFERENCE PATTERNS; NITROGEN MONOXIDE; OPTICAL GAS SENSORS; RADIATION CHANGE; REFLECTED POWER;

REFRACTIVE INDEX;

EID: 77949782474     PISSN: 1559128X     EISSN: 15394522     Source Type: Journal    
DOI: 10.1364/AO.49.001563     Document Type: Article

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