High temperature reliability of SiC n-MOS devices up to 630 °C

Materials Science Forum

Volumn 527-529, Issue PART 2, 2006, Pages 1039-1042

  Ghosh, Ruby N ^a   Loloee, Reza ^a   Isaacs Smith, Tamara ^b   Williams, John R ^b  

^a MICHIGAN STATE UNIVERSITY   (United States)

^b AUBURN UNIVERSITY   (United States)

Author keywords

High temperature; Metal oxide semiconductor (MOS); Reliability

Indexed keywords

CURRENT DENSITY; HIGH TEMPERATURE EFFECTS; OXIDATION; SEMICONDUCTOR MATERIALS; SILICON CARBIDE; THERMAL STRESS;

HIGH TEMPERATURE RELIABILITY; OXIDE BREAKDOWN;

MOS DEVICES;

EID: 37849039212     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/0-87849-425-1.1039     Document Type: Conference Paper

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