Three-dimensionally structured silicon as a substrate for the MOVPE growth of GaN nanoLEDs

Physica Status Solidi (A) Applications and Materials Science

Volumn 206, Issue 6, 2009, Pages 1194-1198

  Fündling, Sönke ^a   Li, Shunfeng ^a   Sökmen, Ünsal ^a   Merzsch, Stephan ^a   Hinze, Peter ^b   Weimann, Thomas ^b   Jahn, Uwe ^c   Trampert, Achim ^c   Riechert, Henning ^c   Peiner, Erwin ^a   Wehmann, Hergo Heinrich ^a   Waag, Andreas ^a  

^a TECHNICAL UNIVERSITY OF BRAUNSCHWEIG   (Germany)

^b PHYSIKALISCH TECHNISCHE BUNDESANSTALT   (Germany)

^c PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

COMPETITIVE GROWTH; CRYOGENIC TEMPERATURES; DRY ETCHING PROCESS; EMISSION SPECTRUMS; GAN NANORODS; GAN NANOSTRUCTURES; GAN-BASED HETEROSTRUCTURES; GROWTH SPECIES; INGAN/GAN MULTI-QUANTUM WELL; LATTICE-MISMATCHED SUBSTRATES; MATERIAL QUALITY; METAL-ORGANIC VAPOUR PHASE EPITAXY; MOVPE GROWTH; NANOPILLARS; PYRAMIDAL SHAPE; SI(111) SUBSTRATE; SILICON PILLAR; SILICON SUBSTRATES; SPATIALLY RESOLVED;

CRYSTAL GROWTH; EMISSION SPECTROSCOPY; GALLIUM NITRIDE; INDUCTIVELY COUPLED PLASMA; METALLORGANIC VAPOR PHASE EPITAXY; NANORODS; OPTICAL PROPERTIES; SEMICONDUCTING GALLIUM; SEMICONDUCTOR QUANTUM WELLS; SILICON; SUBSTRATES; SURFACE DIFFUSION;

GALLIUM ALLOYS;

EID: 67649990841     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200880841     Document Type: Article

References (26)

1. S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, Y. Sugimoto, T. Kozaki, H. Umemoto, M. Sano, and K. Chocho, Appl. Phys. Lett. 72, 2 (1998).
2. T. Hino, S. Tomiya, T. Miyajima, K. Yanashima, S. Hashimoto, and M. Ikseda, Appl. Phys. Lett. 76, 23 (2000).
3. R. I. Barabash, G. E. Ice, C. Roder, J. Budai, W. Liu, S. Figge, S. Einfeldt, D. Hommel, and R. F. Davis, Phys. Status Solidi B 244, 1735 (2007).
4. B. Beaumont, Ph. Vennéguès, and P. Gibart, Phys. Status Solidi B 227, 1 (2001).
5. D. Zubia, S. H. Zaidi, S. D. Hersee, and S. R. J. Brueck, J. Vac. Sci. Technol. B 18, 3514 (2000).
6. C. L. Lin, P. H. Chen, C.-H. Chan, C. Lee, C.-C. Chen, J.-Y. Chang, and C. Y. Liu, Appl. Phys. Lett. 90, 242106 (2007).
7. X.-P. Zhang, Y.-J. Han, Y. Luo, X.-L. Xue, and J. Huang Nano-Optoelectronics Workshop, i-NOW apos07 194-195 (2007).
8. E. Calleja, M. A. Sanchez-Garcia, F. J. Sanchez, F. Calle, F. B. Naranjo, E. Munoz, U. Jahn, and K. H. Ploog, Phys. Rev. B 62, 24 (2000).
9. J. Ristic, M. A. Sanchez-Garcia, J. M. Ulloa, E. Calleja, J. Sanchez-Paramo, J. M. Calleja, U. Jahn, A. Trampert, and K. H. Ploog, Phys. Status Solidi B 234 (3), 717 (2002).
10. H. M. Kim, D. S. Kim, Y. S. Park, D. Y. Kim, T. W. Kang, and K. S. Chung, Adv. Mater. 14, 13 (2002).
11. F. Qian, Y. Li, S. Gradecak, D. Wang, C. J. Barrelet, and C. M. Lieber. Nano Lett. 4, 10 (2004).
12. G Kipshidze, B. Yavich, A. Chandolu, J. Yun, V. Kuryatkov, I. Ahmad, D. Aurongzeb, M. Holtz, and H. Temkin, Appl. Phys. Lett. 86, 033104 (2005).
13. S. K. Lee, H. J. Choi, P. Pauzauskie, P. Yang, N. K. Cho, H. D. Park, E. K. Suh, K. Y. Lim, and H. J. Lee, Phys. Status Solidi B 241, 2775 (2004).
14. Y. D. Wang, K. Y. Zang, and S. J. Chuab, J. Appl. Phys. 100, 054306 (2006).
15. S. D. Hersee, X. Y. Sun, and X. Wang, Nano. Lett. 6, 1808 (2006).
16. S. Fündling, ü. Sökmen, E. Peiner, T. Weimann, P. Hinze, U. Jahn, A. Trampert, H. Riechert, A. Bakin, H.-H. Wehmann, and A. Waag, Nanotechnology 19, 405301 (2008).
17. ü. Sökmen, M. Balke, A. Stranz, E. Peiner, S. Fündling, H.-H. Wehmann, and A. Waag, 19th Micro Mechanics Europe Workshop, Aachen, Germany, 2008.
18. D. Kapolnek, S. Keller, R. Vetury, R. D. Underwood, P. Kozodoy, S. P. Den Baars, and U. K. Mishra, Appl. Phys. Lett. 71, 1204 (1997).
19. B. Beaumont, S. Haffouz, and P. Gibart, Appl. Phys. Lett. 72, 921 (1998).
20. A. Strittmatter, S. Rodt, L. Reißmann, D. Bimberg, H. Schröder, E. Obermeier, T. Riemann, J. Christen, and A. Krost, Appl. Phys. Lett. 78, 6 (2001).
21. G.-P. Tang, E. Peiner, H.-H. Wehmann, A. Lubnow, G. Zwinge, A. Schlachetzki, and J. Hergeth, J. Appl. Phys. 72, 4366 (1992).
22. D. Wüllner, M. Chahoud, T. Schrimpf, P. Bönsch, H.-H. Wehmann, and A. Schlachetzki, J. Appl. Phys. 85, 249 (1999).
23. A. Chandolu, G D. Kipshidze, S. A. Nikishin, L. Tian, S. Daoying, M. Holtz, and A. Lobanova, MRS Symp. Proc. 955, 7 (2007).
24. C. C. Mitchell, M. E. Coltrin, and J. Han, J. Cryst. Growth 222, 144 (2001).
25. X. Li and J. J. Coleman, Appl. Phys. Lett. 70, 438 (1996).
26. S. Hess, R. A. Taylor, J. F. Ryan, N. J. Cain, V. Roberts, and J. Roberts, Phys. Status Solidi B 210, 465 (1998).