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Applied Physics Letters

Volumn 96, Issue 10, 2010, Pages

Effect of gate dielectrics on the device performance of SnO2 nanowire field effect transistors

(4) Park, Hyun Hee a Kang, Pil Soo a Kim, Gyu Tae a Ha, Jeong Sook a

a Korea University (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER; CAPACITOR MODELS; DEVICE PERFORMANCE; DIELECTRIC CONSTANTS; DOPED-TIO; LARGE DIELECTRIC CONSTANT; LOW VOLTAGE OPERATION; NANOWIRE FET; OPERATION VOLTAGE; SUBTHRESHOLD SLOPE;

ALUMINUM; DIELECTRIC MATERIALS; GATE DIELECTRICS; GATES (TRANSISTOR); MESFET DEVICES; NANOWIRES; PERMITTIVITY; SILICON COMPOUNDS;

FIELD EFFECT TRANSISTORS;

EID: 77949730396 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3357432 Document Type: Article

Times cited : (8)

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