Effect of doped nitrogen on the crystallization behaviors of Ge2 Sb2 Te5

Journal of the Electrochemical Society

Volumn 157, Issue 4, 2010, Pages

  Yang, Inseok ^a   Do, Kihoon ^a   Chang, Hyun Jin ^a   Ko, Dae Hong ^a   Sohn, Hyunchul ^a  

^a Yonsei University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AVRAMI CONSTANTS; CROSS-SECTIONAL TEM; CRYSTALLINE FILMS; CRYSTALLIZATION BEHAVIOR; DC MAGNETRON SPUTTERING; DOMINANT PROCESS; DOPED NITROGEN; IN-SITU; JOHNSON-MEHL-AVRAMI; KINETIC CONSTANT; NANOCRYSTALLINE PHASIS; NITROGEN-DOPED; ONE-STEP PROCESS; RESISTANCE MEASUREMENT; TEM; TOP SURFACE; X RAY DIFFRACTOMETRY;

CRYSTALLIZATION; ELECTRIC RESISTANCE; GERMANIUM; NANOCRYSTALLINE ALLOYS; NITROGEN; SCANNING ELECTRON MICROSCOPY; SHEET RESISTANCE; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS;

TELLURIUM COMPOUNDS;

EID: 77949712493     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.3321759     Document Type: Article

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