Influence of oxygen diffusion through capping layers of low work function metal gate electrodes

IEEE Electron Device Letters

Volumn 27, Issue 4, 2006, Pages 228-230

  Chen, Bei ^a   Jha, Rashmi ^a   Lazar, Heather ^a   Biswas, Nivedita ^a   Lee, Jaehoon ^a   Lee, Bongmook ^a   Wielunski, Leszek ^b   Garfunkel, Eric ^b   Misra, Veena ^a  

^a North Carolina State University   (United States)

^b RUTGERS UNIVERSITY   (United States)

Author keywords

Alloy; Capping; Effective work function; Metal gate; MoTa; Oxygen diffusion

Indexed keywords

ANNEALING; AUGER ELECTRON SPECTROSCOPY; DIFFUSION IN GASES; GATES (TRANSISTOR); MOS CAPACITORS; RUTHENIUM; RUTHERFORD BACKSCATTERING SPECTROSCOPY; TUNGSTEN;

CAPPING LAYER; METAL GATE ELECTRODES; OXYGEN DIFFUSION;

MOLYBDENUM ALLOYS;

EID: 33645634260     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2006.871184     Document Type: Article

References (14)

1. G. Wilk, R. M. Wallace, and J. M. Anthony, "High-k gate dielectric: Current status and materials properties considerations," J. Appl. Phys. vol. 89, no. 10, pp. 5243-5275, May 2001.
2. International Technology Roadmap for Semiconductors, S. I. Assoc., Austin, TX, 2004. [Online]. Available http://public.itrs.net/
3. C. Hobbs, L. Fonseca, V. Dhandapani, S. Samavedam, B. Taylor, J. Grant, L. Dip, D. Triyoso, R. Hegde, D. Gilmer, R. Garcia, D. Roan, L. Lovejoy, R. Rai, L. Hebert, H. Tseng, B. White, and P. Tobin, "Fermi level pinning at the polySi/metal oxide interface," in VLSI Symp. Tech. Dig., 2003, pp. 9-10.
4. I. De, D. Johri, A. Srivastava, and C. M. Osburn, "Impact of gate work-function on device performance at the 50 nm technology node," Solid State Electron, vol. 44, no. 6, pp. 1077-1080, Jun. 2000.
5. J. K. Schaeffer, L. R. C. Fonseca, S. B. Samavedam, Y. Liang, P. J. Tobin, and B. E. White, "Contributions to the effective work function of platinum on hafnium dioxide," Appl. Phys. Lett., vol. 85, no. 10, pp. 1826-1828, Sep. 2004.
6. D. Lim, R. Haight, M. Copel, and E. Cartier, "Oxygen defects and Fermi level location in metal-hafnium oxide-silicon structures," Appl. Phys. Lett., vol. 87, no. 7, p. 072902, Aug. 2005.
7. B. Chen, N. Biswas, and V. Misra, "Electrical and physical analysis of MoTa alloy for gate electrode applications," J. Elecrochem. Soc. to be published.
8. V. Misra, H. Zhong, and H. Lazar, "Electrical properties of Ru-based alloy gate electrodes for dual metal gate Si-CMOS," IEEE Electron Device Lett., vol. 23, no. 6, pp. 354-356, Jun. 2002.
9. D. A. Buchanan, F. R. McFeely, and J. J. Yurkas, "Fabrication of midgap metal gates compatible with ultrathin dielectrics," Appl. Phys. Lett., vol. 73, no. 12, pp. 1676-1678, Sep. 1998.
10. 2/Si metal oxide semiconductor capacitors," J. Electrochem. Soc., vol. 148, no. 9, pp. F189-F193, 2001.
11. J. R. Hauser and W. T. Lynch, SRC Working Paper, 1997.
12. 2/Si structure by Fowler-Nordheim current analysis," Appl. Phys. Lett., vol. 80, no. 8, pp. 1403-1405, Feb. 2002.
13. Z. Weinberg, "On tunning in metal-oxide-silicon structures," J. Appl. Phys., vol. 53, no. 7, pp. 5052-5056, Jul. 1982.
14. D. L. Lide, Handbook of Chemistry and Physics, 85th ed. New York: CRC Press, 2004.