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Volumn 7, Issue 1, 2010, Pages 28-31
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Boule-like growth of GaN by HVPE
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Author keywords
[No Author keywords available]
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Indexed keywords
BLUE LASER DIODES;
C-PLANE SUBSTRATES;
COST-EFFICIENT;
GAN LAYERS;
GAN SUBSTRATE;
GAN/SAPPHIRE;
GROWTH CONDITIONS;
GROWTH OF GAN;
GROWTH PARAMETERS;
HIGH GROWTH RATE;
MATERIAL QUALITY;
MORPHOLOGICAL DEFECTS;
NARROW-LINE WIDTH;
THREADING DISLOCATION DENSITIES;
X RAY ROCKING CURVE;
CRACKS;
GALLIUM NITRIDE;
SEMICONDUCTOR GROWTH;
GALLIUM ALLOYS;
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EID: 77949664717
PISSN: 18626351
EISSN: 16101642
Source Type: Journal
DOI: 10.1002/pssc.200982616 Document Type: Conference Paper |
Times cited : (10)
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References (13)
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