Keto defect sites in fluorene-based organic field-effect transistors: The origin of rapid degradation on the performance of the device

Journal of Applied Physics

Volumn 97, Issue 10, 2005, Pages

  Noh, Yong Young ^a   Kim, Dong Yu ^a   Yoshida, Yuji ^b   Yase, Kiyoshi ^b   Jung, Byung Jun ^c,d   Lim, Eunhee ^c   Shim, Hong Ku ^c   Azumi, Reiko ^b  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^c Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^d Samsung SDI   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

BITHIOPHENES (BFTT); FLUORENES; KETO DEFECTS; ORGANIC FIELD EFFECT TRANSISTORS (OFET);

AROMATIC COMPOUNDS; DEGRADATION; ELECTRIC SPACE CHARGE; FIELD EFFECT TRANSISTORS; FOURIER TRANSFORM INFRARED SPECTROSCOPY; IRRADIATION; NITROGEN; OLIGOMERS; OXIDATION; PHOTOLUMINESCENCE; POLYCRYSTALLINE MATERIALS; ULTRAVIOLET RADIATION;

CRYSTAL DEFECTS;

EID: 20944450551     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1897068     Document Type: Article

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