Boron ultra low energy SIMS depth profiling improved by rotating stage

Applied Surface Science

Volumn 252, Issue 19, 2006, Pages 7315-7317

  Bersani, M ^a   Giubertoni, D ^a   Iacob, E ^a   Barozzi, M ^a   Pederzoli, S ^a   Vanzetti, L ^a   Anderle, M ^a  

^a ITC IRST   (Italy)

Author keywords

O 2 + analysis; Ripples; Roughness; SIMS; Ultra shallow junctions

Indexed keywords

BORON; DOPING (ADDITIVES); OXYGEN; SECONDARY ION MASS SPECTROMETRY; SILICON; SPUTTERING; SURFACE ROUGHNESS;

BORON DISTRIBUTIONS; O2+ ANALYSIS; RIPPLES; ULTRA SHALLOW JUNCTIONS;

ATMOSPHERIC CHEMISTRY;

EID: 33747173747     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2006.02.282     Document Type: Article

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