Ultrahigh selective etching of Si3 N4 films over Si O2 films for silicon nitride gate spacer etching

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 28, Issue 1, 2010, Pages 131-137

  Lee, Sunghoon ^a,b   Oh, Jinho ^b   Lee, Kyumin ^b   Sohn, Hyunchul ^b  

^a Hynix Semiconductor Inc   (South Korea)

^b Yonsei University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

BLANKET WAFERS; CARBON CONTENT; EFFECTIVE THICKNESS; ETCH BEHAVIOR; ETCH RATES; ETCH STOP; ETCHED FILMS; ETCHING SELECTIVITY; FLUOROCARBON FILMS; GATE SPACERS; PROCESS WINDOW; PRODUCT LAYER; SELECTIVE ETCHING; SILICON NITRIDE FILM;

CARBON FILMS; ETCHING; INDUCTIVELY COUPLED PLASMA; LEAD OXIDE; OXIDE FILMS; SEMICONDUCTING SILICON COMPOUNDS; SILICON NITRIDE; SILICON OXIDES;

SILICON WAFERS;

EID: 77949371728     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.3290752     Document Type: Conference Paper

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