Substrate bias dependent leakage in LDD MOSFETs

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1988, Pages 230-233

  Sweeney, John ^a   Herr, Norman ^a   Schani, Phil ^a   Mauntel, Rick ^a   Mendez, Horacio ^a   Fejes, Peter ^a   Parrillo, Louis C ^a  

^a MOTOROLA INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

TRANSISTORS, FIELD EFFECT--ELECTRIC PROPERTIES;

DRAIN-TO-SUBSTRATE LEAKAGE CURRENT; LIGHTLY DOPED DRAIN (LDD) MOSFET; SIDEWALL SPACERS; SPACER FORMATION PROCESS; SUBSTRATE BIAS DEPENDENT LEAKAGE;

SEMICONDUCTOR DEVICES, MOSFET;

EID: 0024177066     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)