SHG and AFM study of PECVD a-Si:H films

Vacuum

Volumn 69, Issue 1-3, 2002, Pages 391-394

  Alexandrova, S ^a   Danesh, P ^a   Maslyanitsyn, I A ^b  

^a INSTITUTE OF SOLID STATE PHYSICS   (Bulgaria)

^b PROKHOROV GENERAL PHYSICS INSTITUTE   (Russian Federation)

Author keywords

AFM; Amorphous silicon; SHG; Stress

Indexed keywords

AMORPHOUS SILICON; ATOMIC FORCE MICROSCOPY; CHEMICAL VAPOR DEPOSITION; SECOND HARMONIC GENERATION; SUBSTRATES;

MICROVOIDS;

THIN FILMS;

EID: 0037168572     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0042-207X(02)00364-0     Document Type: Conference Paper

References (10)

1. Alexandrova S., Danesh P., Maslyanitsyn I.A. Phys Rev B. 61:2000;11136-11139.
2. Spear W.E., Heintze M. Philos Mag B. 54:1986;343-348.
3. Stevens K.S., Johnson N.M. J Appl Phys. 71:1992;2628-2631.
4. Danesh P., Pantchev B. Semicond Sci Technol. 15:2000;971-974.
5. Antoine A.M., Drevillon B. J Appl Phys. 63:1988;360-365.
6. Elliot S.R. Adv Phys. 38:1989;1-42.
7. Asoka-Kumar P., Stein H.J., Lin K.G. Appl Phys Lett. 64:1994;1684-1689.
8. Kim Y., Chang L. Phys Rev Lett. 86:2001;1773-1775.
9. Danesh P., Pantchev B. Fritzsche H. Amorphous silicon and related materials. 1988;81 World Scientific, Singapore.
10. Jiang Y., Wilson P.T., Downer M.C., White C.W., Withrow S.P. Appl Phys Lett. 78:2001;766-768.