A low damage GaN-based light-emitting diode with textured/inclined sidewalls and an air-buffer layer

Displays

Volumn 31, Issue 2, 2010, Pages 111-114

  Liu, Yi Jung ^a   Tsai, Tsung Yuan ^a   Yu, Kuo Hui ^b   Guo, Der Feng ^c   Chen, Li Yang ^a   Tsai, Tsung Han ^a   Liu, Wen Chau ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b Department of Epitaxy Research and Development   (Taiwan)

^c DEPARTMENT OF ELECTRONIC ENGINEERING   (Taiwan)

Author keywords

GaN; KOH; Light emitting diode; Wet etching

Indexed keywords

ELECTRICAL CHARACTERISTIC; GAN-BASED LIGHT-EMITTING DIODES; KOH ETCHING; LATERAL DIRECTIONS; LATERAL ETCHING; LOW DAMAGES; MULTIPLE QUANTUM WELLS; OUTPUT POWER; PASSIVATION LAYER; PATTERNED SAPPHIRE SUBSTRATE; RE-EMISSION; SILICON DIOXIDE;

BUFFER LAYERS; DIODES; GALLIUM ALLOYS; GALLIUM NITRIDE; LIGHT; LIGHT EMISSION; LIGHT EMITTING DIODES; LIGHT SOURCES; ORGANIC LIGHT EMITTING DIODES (OLED); PASSIVATION; PHOTONS; SEMICONDUCTOR QUANTUM WELLS; SILICA; SILICON OXIDES;

WET ETCHING;

EID: 77949308939     PISSN: 01419382     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.displa.2010.02.003     Document Type: Article

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