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Volumn 200, Issue 1, 2003, Pages 87-90

High efficiency GaN-based LEDs using plasma selective treatment of p-GaN surface

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM NITRIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PLASMA ETCHING; REACTIVE ION ETCHING; SILICON NITRIDE;

EXTRACTION EFFICIENCY; PLASMA SELECTIVE TREATMENT;

LIGHT EMITTING DIODES;

EID: 0348146365 PISSN: 00318965 EISSN: None Source Type: Journal
DOI: 10.1002/pssa.200303253 Document Type: Article

Times cited : (12)

References (9)

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