Electromigration characteristic of SnAg3.0Cu0.5 flip chip interconnection

IEEE Transactions on Advanced Packaging

Volumn 33, Issue 1, 2010, Pages 189-195

  Lee, Chien Chen ^a   Lee, Chang Chun ^a,b   Chiang, Kuo Ning ^a  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^b TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

Author keywords

Cotton type void; Current crowing ratio; Electromigration; Finite element method (FEM); Flip chip interconnection; Intermetallic compound (IMC); Pancake type void; Polarity effect; Tilting effect; Void propagation

Indexed keywords

APPLIED CURRENT; BUMP GEOMETRY; CURRENT CROWDING; CURRENT CROWDING EFFECT; ELECTROMIGRATION BEHAVIOR; ELECTROMIGRATION FAILURES; FLIP CHIP SOLDER BUMP; FLIP CHIP SOLDER JOINTS; FLIP-CHIP INTERCONNECTION; HIGH CURRENT DENSITIES; INTERMETALLIC COMPOUND (IMC); INTERMETALLIC COMPOUNDS; KEY FACTORS; LINEAR RELATIONSHIPS; LOCAL HEAT; MAXIMUM CURRENT DENSITY; MICROELECTRONIC INTERCONNECTION; NUMERICAL MODELS; POLARITY EFFECT; SOLDER BUMP; TEST VEHICLE; VOID FORMATION;

COTTON; CURRENT DENSITY; ELECTROMIGRATION; FAILURE ANALYSIS; FLIP CHIP DEVICES; MICROELECTRONICS; SEMICONDUCTING INTERMETALLICS; SOLDERING; SOLDERING ALLOYS; THREE DIMENSIONAL; TIN; VEHICULAR TUNNELS;

FINITE ELEMENT METHOD;

EID: 77949268293     PISSN: 15213323     EISSN: None     Source Type: Journal    
DOI: 10.1109/TADVP.2009.2033941     Document Type: Article

References (14)

1. W. J. Choi, E. C. C. Yeh, and K. N. Tu, "Mean-time-to-failure study of flip chip solder joints on Cu-Ni(V)-Al thin-film under-bump-metal-lization, " J. Appl. Phys., vol. 94, pp. 5665-5671, 2003, 5665.
2. T. L. Shao, Y. H. Chen, S. H. Chiu, and C. Chen, "Electromigration failure mechanisms for SnAg3.5 solder bumps on Ti/Cr-Cu/Cu and Ni(P)-Au metallization pads," J. Appl. Phys., vol. 96, no. 8, pp. 4518-4524, 2004.
3. H. Gan and K. N. Tu, "Polarity effect of electromigration on kinetics of intermetallic compound formation in Pb-free," J. Appl. Phys., vol. 97, p. 063514, 2005.
4. H. Yeh, C. Basaran, and D. C. Hopkins, "Numerical simulation of stress evolution during electromigration in IC interconnect lines," IEEE Trans. Comp. Packag. Technol, vol. 26, no. 3, pp. 673-681, Sep. 2003.
5. J. D. Wu, C. W. Lee, P. J. Zheng, J. C. B. Lee, and S. Li, "Electromigration reliability of SnAgxCuy flip chip interconnects," in Proc. 54th Electron. Compon. Technol. Conf., Las Vegas, NV, Jun. 2004, pp. 961-967.
6. T. Y. Lee, T. Y. Lee, and K. N. Tu, "A study of electromigration in 3-D flip chip solder joint using numerical simulation of hest flux and current density," IEEE Trans. Comp. Packag. Technol, vol. 27, no. 3, pp. 472-479, Sep. 2004.
7. J. W. Nah, J. O. Suh, and K. N. Tu, "Effect of current crowding and Joule heating on electromigration-induced failure in flip chip composite solder joints tested at room temperature," J. Appl. Phys., vol. 98, p. 013715, 2005.
8. C. M. Tang, A. Roy, A. V. Vairagar, A. Krisjnamoorthy, and S. Mhaisalkar, "Current crowding effect on copper dual damascene via bottom failure for ULSI application," IEEE Trans. Device Mater. Rel, vol. 5, no. 2, pp. 198-205, Jun. 2005.
9. J. J. Clement, "Electromigration modeling for integrated circuit interconnect reliability analysis," IEEE Trans. Device Mater. Rel, vol. 1, pp. 33-42, Mar. 2001.
10. K. N. Chiang, C. C. Lee, C. C. Lee, and K. M. Chen, "Current crowding-induced electromigration in SnAg3.0Cu0.5 microbumps," Appl. Phys. Lett., vol. 88, p. 072102, 2006.
11. 3 solder joints," J. Materials Electron., vol. 9, pp. 373-381, 1998.
12. 0.7 solder strips," J. Appl. Phys., vol. 98, p. 033523, 2005.
13. Y. C. Hu, Y. H. Lin, and K. N. Tu, "Electromigration failure in flip chip solder joints due to rapid dissolution of copper," J. Mater. Res., vol. 18, no. 11, pp. 2544-2548, 2003.
14. C. Basaran, H. Ye, D. C. Hopkins, D. Frear, and J. K. Lin, "Failure modes of flip chip solder joints under high electric current density," J. Electron. Packag., vol. 127, pp. 157-163, 2005.