Ultrathin amorphous Si layer formation by femtosecond laser pulse irradiation

Applied Physics Letters

Volumn 90, Issue 4, 2007, Pages

  Izawa, Yusaku ^a   Izawa, Yasukazu ^a   Setsuhara, Yuichi ^a   Hashida, Masaki ^b   Fujita, Masayuki ^c   Sasaki, Ryuichiro ^d   Nagai, Hiroyuki ^d   Yoshida, Makoto ^d  

^a OSAKA UNIVERSITY   (Japan)

^b KYOTO UNIVERSITY   (Japan)

^c INSTITUTE FOR LASER TECHNOLOGY   (Japan)

^d AISIN SEIKI CO LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHIZATION; LASER BEAM EFFECTS; LASER PULSES; TRANSMISSION ELECTRON MICROSCOPY; ULTRATHIN FILMS;

FEMTOSECOND LASER IRRADIATION; LIGHT PENETRATION DEPTH; ULTRATHIN AMORPHIZED SI LAYER;

AMORPHOUS SILICON;

EID: 33846697041     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2431709     Document Type: Article

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