Improved ferroelectric and pyroelectric properties in Mn-doped lead zirconate titanate thin films

Journal of Applied Physics

Volumn 94, Issue 8, 2003, Pages 5228-5233

  Zhang, Q ^a   Whatmore, R W ^a  

^a CRANFIELD UNIVERSITY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

DOPING (ADDITIVES); ELECTRODES; HYSTERESIS; INTERFACES (MATERIALS); PERMITTIVITY; ZIRCONIUM COMPOUNDS;

HYSTERETIC FATIGUE;

THIN FILMS;

EID: 0242272358     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1613370     Document Type: Article

References (32)

1. J. F. Scott and C. A. Paz de Araujo, Science 246, 1400 (1989).
2. O. Auciello, J. F. Scott, and R. Ramesh, Phys. Today 51, 22 (1998).
3. G. H. Haertling, J. Am. Ceram. Soc. 82, 797 (1999).
4. D. Bao, N. Wakiya, K. Shinozaki, and N. Mizutani, J. Phys. D 35, L1 (2002).
5. J. H. Jang and K. H. Yoon, Appl. Phys. Lett. 75, 130 (1999).
6. J. Robertson, C. W. Chen, W. Warren, and C. D. Guleben, Appl. Phys. Lett. 69, 1704 (1996).
7. K. Watanabe, A. Hartmann, R. Lamb, R. Craig, M. Thurgate, and J. Scott, Jpn. J. Appl. Phys., Part 2 39, L309 (2000).
8. M. Grossmann, O. Lohse, D. Bolten, U. Boettger, T. Schneller, and R. Waser, J. Appl. Phys. 92, 2680 (2002).
9. R. W. Whatmore and R. Watton, in Infrared Detectors and Emitters: Materials and Devices, edited by P. Capper and C. T. Elliott (Chapman and Hall, London, 2000), pp. 99-148.
10. Z. Huang, Q. Zhang, and R. W. Whatmore, J. Appl. Phys. 86, 1662 (1999).
11. Z. Huang, Q. Zhang, and R. W. Whatmore, J. Appl. Phys. 85, 7355 (1999).
12. Q. Zhang and R. W. Whatmore, J. Phys. D 34, 2296 (2001).
13. Q. Zhang and R. W. Whatmore, Integr. Ferroelectr. 41, 43 (2001).
14. M. Algueró, A. J. Bushby, P. Hvizdoš, M. J. Reece, R. W. Whatmore, and Q. Zhang, Integr. Ferroelectr. 41, 53 (2001).
15. M. Klee, R. Eusemann, R. Waser, W. Brand, and H. Hal, J. Appl. Phys. 72, 1566 (1992).
16. T. Mihara, H. Watanabe, and C. A. Paz De Araujo, Jpn. J. Appl. Phys., Part 1 33, 5281 (1994).
17. X. F. Du and I. W. Chen, J. Appl. Phys. 83, 7789 (1998).
18. M. Dawber and J. F. Scott, Appl. Phys. Lett. 76, 1060 (2000); 76, 3655 (2000).
19. M. Dawber and J. F. Scott, Appl. Phys. Lett. 76, 1060 (2000); 76, 3655 (2000).
20. G. Arlt and H. Neumann, Ferroelectrics 87, 109 (1988).
21. U. Robels and G. Arlt, J. Appl. Phys. 73, 3454 (1993).
22. R. Lohkamper, H. Neumann, and G. Arlt, J. Appl. Phys. 68, 4220 (1990).
23. W. L. Warren, B. A. Tuttle, and D. Dimos, Appl. Phys. Lett. 67, 1426 (1995).
24. W. L. Warren, D. Dimos, B. A. Tuttle, R. D. Nasby, and G. E. Pike, Appl. Phys. Lett. 65, 1018 (1994).
25. W. L. Warren, D. Dimos, H. N. Al-Shareef, M. V. Raymond, B. A. Tuttle, and G. E. Pike, J. Am. Ceram. Soc. 79, 1714 (1996).
26. I. K. Yoo, S. B. Desu, and J. Xing, Mater. Res. Soc. Symp. Proc. 310, 165 (1993).
27. I. K. Yoo and S. B. Desu, Mater. Res. Soc. Symp. Proc. 243, 323 (1992).
28. K. H. Ahn, S. Baik, and S. S. Kim, J. Appl. Phys. 92, 2651 (2002).
29. Q. Zhang, R. W. Whatmore, and D. Keeble (unpublished).
30. J. W. Hong, W. Jo, D. C. Kim, S. M. Cho, H. J. Nam, H. M. Lee, and J. U. Bu, Appl. Phys. Lett. 75, 3183 (1999).
31. I. G. Jenkins, T. K. Song, S. Madhukar, A. S. Prakash, S. Aggarwal, and R. Ramesh, Appl. Phys. Lett. 72, 3300 (1998).
32. J. J. Lee, C. L. Thio, and S. B. Desu, Phys. Status Solidi A 151, 171 (1995).