Evaluation of Ta2O5 as a buffer layer film for integration of microwave tunable Ba1-xSrxTiO3 based thin films with silicon substrates

Journal of Applied Physics

Volumn 92, Issue 7, 2002, Pages 3967-3973

  Cole, M W ^a   Joshi, P C ^a   Ervin, M ^a   Wood, M ^a   Pfeffer, R L ^b  

^a U S ARMY RESEARCH LABORATORY   (United States)

^b MOUNT SINAI SCHOOL OF MEDICINE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ATOMIC FORCE MICROSCOPY; AUGER ELECTRON SPECTROSCOPY; BARIUM COMPOUNDS; BUFFER LAYERS; DIELECTRIC MATERIALS; DIELECTRIC PROPERTIES; FIELD EMISSION MICROSCOPES; HIGH-K DIELECTRIC; INTEGRATION; MICROSTRUCTURE; MORPHOLOGY; PLATINUM COMPOUNDS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; SILICON; STRONTIUM COMPOUNDS; SUBSTRATES; SURFACE MORPHOLOGY; TANTALUM OXIDES; TITANIUM COMPOUNDS;

ANNEALING TEMPERATURES; FIELD EMISSION SCANNING ELECTRON MICROSCOPY; FILM MICROSTRUCTURES; HIGH FREQUENCY HF; INTERFACIAL PROPERTY; METALORGANIC SOLUTION; RUTHERFORD BACK-SCATTERING SPECTROMETRY; SILICON SUBSTRATES;

THIN FILMS;

EID: 18644375094     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1505999     Document Type: Article

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