Effect of O2 post annealing and plasma treatment in enhancing the resistance switching characteristics of Pr0.7Ca 0.3MnO3 films with SrRuO3 buffer layers

Journal of the Korean Physical Society

Volumn 53, Issue 6, 2008, Pages 3427-3430

  Joo, Sanghyun ^a   Sok, Junghyun ^a  

^a University of Seoul   (South Korea)

Author keywords

Electro resistance; Perovskite material; Reram

Indexed keywords

EID: 58249109344     PISSN: 03744884     EISSN: None     Source Type: Journal    
DOI: 10.3938/jkps.53.3427     Document Type: Article

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