Effect of substrate on phase transformation kinetics of WSix films

Thin Solid Films

Volumn 462-463, Issue SPEC. ISS., 2004, Pages 127-131

  Bharat, S ^a   Sahoo, P K ^a   Katiyar, M ^a  

^a INDIAN INSTITUTE OF TECHNOLOGY KANPUR   (India)

Author keywords

Annealing; Phase transformation in thin films; Substrate effect; Tungsten silicide

Indexed keywords

PHASE TRANSFORMATION IN THIN FILMS; SUBSTRATE EFFECT; TUNGSTEN SILICIDE; X-RAY INTENSITY;

ANNEALING; CHEMICAL VAPOR DEPOSITION; COMPOSITION; ELECTRIC CONDUCTIVITY; METALLIZING; PHASE TRANSITIONS; REACTION KINETICS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SUBSTRATES; TUNGSTEN COMPOUNDS; VLSI CIRCUITS; X RAY DIFFRACTION ANALYSIS;

AMORPHOUS FILMS;

EID: 4344716146     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2004.05.013     Document Type: Article

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