Atomistic simulation of carbon nanotube field-effect transistors using non-equilibrium Green's function formalism

2004 10th International Workshop on Computational Electronics, IEEE IWCE-10 2004, Abstracts

Volumn , Issue , 2004, Pages 71-72

  Guo, Jing ^a   Datta, Supriyo ^a   Anantram, M P ^b   Lundstrom, Mark ^a  

^a PURDUE UNIVERSITY   (United States)

^b NASA AMES RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMISTIC MODE; CARBON ATOMS; ELECTRONIC DEVICES; QUANTUM TRANSPORT EFFECTS;

CARBON NANOTUBES; COMPUTER SIMULATION; ELECTRIC INSULATORS; GREEN'S FUNCTION; HEAT CONDUCTION; PARAMETER ESTIMATION; QUANTUM THEORY; SCHOTTKY BARRIER DIODES;

FIELD EFFECT TRANSISTORS;

EID: 21844455313     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)

1. McEuen et al., IEEE Trans on Nano., 1, 78, 2002.
2. Avouris et al., Proceedings of IEEE, 91, 172, 2004
3. Javey et al., Nano Lett., in press.
4. Guo et al., IEEE Trans. on ED, 51, 172, 2004