Morphologies of GaN single crystals grown from Ga solutions under flowing ammonia

Journal of Crystal Growth

Volumn 292, Issue 2, 2006, Pages 201-205

  Sun, G ^a   Meissner, E ^a   Hussy, S ^a   Birkmann, B ^a   Friedrich, J ^a   Muller G ^a  

^a FRAUNHOFER INSTITUTE FOR INTEGRATED SYSTEMS AND DEVICE TECHNOLOGY IISB   (Germany)

Author keywords

A1. Growth condition; A1. Morphology; A2. Chemical synthesis; A2. Solution growth; B2. GaN single crystals; B2. Semiconducting III V materials

Indexed keywords

AMMONIA; CRYSTAL GROWTH; GALLIUM; GALLIUM NITRIDE; MORPHOLOGY; SOLUTIONS; SYNTHESIS (CHEMICAL);

CHEMICAL SYNTHESIS; GROWTH CONDITION; SEMICONDUCTING III-V MATERIALS; SOLUTION GROWTH;

SINGLE CRYSTALS;

EID: 33745810182     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.04.014     Document Type: Article

References (14)

1. Nam O.-H., Bremser M.D., Zheleva T.S., and Davis R.F. Appl. Phys. Lett. 71 (1997) 2638
2. Zheleva T.S., Smith S.A., Thomson D.B., Gehrke T., Linthicum K.J., Rajagopal P., Carlson E., Ashmawi W.M., and Davis R.F. MRS Internet J. Nitride Semicond. Res. 4S1 (1999) G3.38
3. Perlin P., Leszczyski M., Prystawko P., Wisniewski P., et al. MRS Internet J. Nitride Semicond. Res. 9 3 (2004)
4. Grzegory I., Bockowski M., Lucznik B., Krukowski S., Romanowski Z., Wroblewski M., and Porowski S. J. Crystal Growth 246 (2002) 177
5. Aoki M., Yamane H., Shimada M., Sarayama S., and DiSalvo F.J. J. Crystal Growth 242 (2002) 70
6. Song Y.-T., Wang W.-J., Yuan W.-X., Wu X., and Chen X.-L. J. Crystal Growth 247 (2003) 275
7. E. Meissner, G. Sun, S. Hussy, B. Birkmann, J. Friedrich, G. Mueller, in: Proceedings of the 21st Century COE Joint Workshop on Bulk Nitrides, IPAP Conference Series 4, pp. 46-49.
8. Meissner E., Birkmann B., Hussy S., Sun G., Friedrich J., and Mueller G. Phys. Stat. Sol. (c) 2 (2005) 2040
9. Dyck J.S., Kash K., Grossner M.T., Hayman C.C., Argoitia A., Yang N., Hong M.-H., Kordesch M.E., and Angus J.C. MRS Internet J. Nitride Semicond. Res. 4S1 (1999) G3.23
10. Yamane H., Kinno D., Shimada M., Sekiguchi T., and DiSalvo F.J. J. Mater. Sci. 35 (2000) 801
11. Prywer J., and Krukowski S. MRS Internet J. Nitride Semicond. Res. 3 (1998) 47
12. Aoki M., Yamane H., Shimada M., Kajiwara T., Sarayama S., and DiSalvo F.J. Crystal Growth Design 2 (2002) 55
13. Aoki M., Yamane H., Shimada M., Sarayama S., and DiSalvo F.J. Crystal Growth Design 1 (2001) 119
14. Elwell D., Feigelson R.S., Simkins M.M., and Tiller W.A. J. Crystal Growth 66 (1984) 45