Microstructure evolution of GaN buffer layer on MgAl2O4 substrate

Journal of Crystal Growth

Volumn 193, Issue 4, 1998, Pages 478-483

  Yang, H F ^a   Han, P D ^a,b   Cheng, L S ^a   Zhang, Z ^a   Duan, S K ^b   Teng, X G ^b  

^a INSTITUTE OF GEOLOGY AND GEOPHYSICS   (China)

^b INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

Buffer layer; GaN; MgAl2O4; Threading dislocation; Transmission electron microscopy

Indexed keywords

ANNEALING; CRYSTAL LATTICES; CRYSTAL MICROSTRUCTURE; CRYSTALLINE MATERIALS; CRYSTALLOGRAPHY; DISLOCATIONS (CRYSTALS); MAGNESIUM COMPOUNDS; METALLORGANIC VAPOR PHASE EPITAXY; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY;

GALLIUM NITRIDE;

SEMICONDUCTING FILMS;

EID: 0032475556     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)00516-8     Document Type: Article

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