Impact of H2-preannealing of the sapphire substrate on the crystallinity of low-temperature-deposited AlN buffer layer

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 44, Issue 6 A, 2005, Pages 3913-3917

  Tsuda, Michinobu ^a,b   Balakrishnan, Krishnan ^b   Iwaya, Motoaki ^b   Kamiyama, Satoshi ^b   Amano, Hiroshi ^b   Akasaki, Isamu ^b  

^a KYOCERA CORPORATION   (Japan)

^b MEIJO UNIVERSITY   (Japan)

Author keywords

Buffer layer; GaN; H2 preannealing; LT AlN; MOVPE; Sapphire

Indexed keywords

ANNEALING; CRYSTALLINE MATERIALS; DEPOSITION; GALLIUM NITRIDE; LOW TEMPERATURE OPERATIONS; SUBSTRATES;

BUFFER LAYERS; GAN; LT-AIN;

SAPPHIRE;

EID: 23944507009     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.44.3913     Document Type: Article

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