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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 41, Issue 8, 2002, Pages 5038-5041

Epitaxial growth of GaN film on (La,Sr)(Al,Ta)O3 (111) substrate by metalorganic chemical vapor deposition

(10) Sumiya, Masatomo a,e Chikyow, Toyohiro a Sasahara, Takayuki b Yoshimura, Katsuhiko c Ohta, Jitsuo a Fujioka, Hiroshi c Tagaya, Sumiyoshi d Ikeya, Hirofumi c Koinuma, Hideomi b Fuke, Shunro c

a SHIZUOKA UNIVERSITY (Japan)

b NATIONAL INSTITUTE FOR MATERIALS SCIENCE (Japan)

c UNIVERSITY OF TOKYO (Japan)

d Pulsetech Industry Co Ltd (Japan)

e TOKYO INSTITUTE OF TECHNOLOGY (Japan)

Author keywords

(La,Sr)(Al,Ta)O3 (LSAT) (111) substrate; AlN blocking layer; Crystallographic orientation; GaN; Metalorganic chemical vapor deposition

Indexed keywords

AMMONIA; CRYSTAL ORIENTATION; CRYSTAL STRUCTURE; CRYSTALLOGRAPHY; EPITAXIAL GROWTH; GALLIUM NITRIDE; INTERFACES (MATERIALS); LATTICE CONSTANTS; PEROVSKITE; THERMAL EXPANSION; TRANSMISSION ELECTRON MICROSCOPY;

EPITAXIAL LATERAL OVERGROWTH (ELO) TECHNIQUE;

CHEMICAL VAPOR DEPOSITION;

EID: 0036697490 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.41.5038 Document Type: Article

Times cited : (20)

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