High-performing submicron organic thin-film transistors fabricated by residue-free embossing

Organic Electronics

Volumn 11, Issue 4, 2010, Pages 552-557

  Auner, Christoph ^a   Palfinger, Ursula ^a   Gold, Herbert ^a   Kraxner, Johanna ^a   Haase, Anja ^a   Haber, Thomas ^b   Sezen, Meltem ^b   Grogger, Werner ^b   Jakopic, Georg ^a   Krenn, Joachim R ^a   Leising, G ^b   Stadlober, Barbara ^a  

^a JOANNEUM RESEARCH   (Austria)

^b GRAZ UNIVERSITY OF TECHNOLOGY   (Austria)

Author keywords

Hot Embossing; Nanoimprint lithography; Organic thin film transistors; Submicron channel length

Indexed keywords

BUDGET CONTROL; FABRICATION; FIELD EFFECT TRANSISTORS; LITHOGRAPHY; NANOIMPRINT LITHOGRAPHY; SEMICONDUCTING ORGANIC COMPOUNDS; THIN FILM TRANSISTORS; THIN FILMS;

CHEMICAL AND PHYSICAL PROPERTIES; HOT-EMBOSSING; MODERATE TEMPERATURE; NANOIMPRINT LITHOGRAPHY PROCESS; ORGANIC THIN FILM TRANSISTORS; SOURCE AND DRAIN ELECTRODES; SUBMICRON CHANNELS; SWITCH-ON VOLTAGE;

THIN FILM CIRCUITS;

EID: 77549087846     PISSN: 15661199     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.orgel.2009.12.012     Document Type: Article

References (21)

1. For a review on applications and products see:. In: Klauk H. (Ed). Chapter 4 in Organic Electronics: Materials, Manufacturing and Applications (2006), Wiley-VCH, Weinheim, Germany
2. Ahn S.H., and Guo L.J. High-speed roll-to-roll nanoimprint lithography on flexible plastic substrates. Adv. Mater. 20 (2008) 2044-2049
3. Ahn S.H., and Guo L.J. Large area roll-to-roll and roll-to-plate nanoimprint lithography: a step toward high-throughput application of continuous nanoimprinting. ACS Nano 3 (2009) 2304-2310
4. W.B. Jackson, Active-matrix backplanes produced by roll-to-roll self-aligned imprint lithography (SAIL), in: SID International Symposium Digest of Technical Papers 2008, vol. 39, p. 322.
5. Zhang Y., Patta J.R., Ambily S., Shen Y., Ralph D.C., and Malliaras G. 30 nm channel length pentacene transistors. Adv. Mater. 15 (2003) 1632
6. Collet J., Tharaud O., Chapoton A., and Vuillaume D. Low-voltage, 30 nm channel length, organic transistors with a self-assembled monolayer as gate insulating film. Appl. Phys. Lett. 76 (2000) 1941
7. Leufgen M., Bass U., Muck T., Borzenko T., Schmidt G., Geurts J., and Wagner V. Optimized sub-micron organic thin-film transistors: the influence of contacts and oxide thickness. Synth. Met. 146 (2004) 341
8. Wang L., Fine D., Jung T., Basu D., von Seggern H., and Dodabalpur A. Pentacene field-effect transistors with sub-10 nm channel lengths. Appl. Phys. Lett. 85 (2004) 1772
9. Lee J.B., Chang P., Liddle J.A., and Subramanian V. Pentacene field-effect transistors with 10-nm channel lengths. IEEE Trans. Electron Dev. 52 (2005) 1874
10. Cheng X., Li D., and Jay Guo L. A hybrid mask-mould lithography scheme and its application in nanoscale organic thin film. Nanotechnology 17 (2006) 927-932
11. Austin M.D., and Chou S.Y. Fabrication of 70 nm channel length polymer organic thin-film transistors using nanoimprint lithography. Appl. Phys. Lett. 81 (2002) 4431-4433
12. Stadlober B., Haas U., Gold H., Haase A., Jakopic G., Leising G., Koch N., Rentenberger S., and Zojer E. Orders-of-magnitude reduction of the contact resistance in short-cannel hot embossed organic thin film transistors by oxidative treatment of Au electrodes. Adv. Funct. Mater. 17 (2007) 2687-2692
13. Kam A.P., Seekamp J., Solovyev V., Clavijo Cedeno C., Goldschmidt A., and Sotomayor Torres C.M. Nanoimprinted organic field-effect transistors: fabrication, transfer mechanism and solvent effects on device characteristics. Microelectron. Eng. 73-74 (2004) 809-813
14. Haas U., Gold H., Haase A., Jakopic G., and Stadlober B. Submicron pentacene-based organic thin-film transistors on flexible substrates. Appl. Phys. Lett. 92 (2007) 043511
15. Zaumseil J., Someya T., Bao Z., Loo Y.-L., Cirelli R., and Rogers J.A. Nanoscale organic transistors that use source/drain electrodes supported by high-resolution rubber stamps. Appl. Phys. Lett. 82 (2003) 793-795
16. Giannuzzi L.A., and Stevie F.A. Introduction to Focused Ion Beams (2004), Springer, Berlin
17. Mathijssen S.G.J., Kemerink M., Sharma A., Cölle M., Bobbert P.A., Janssen R.A.J., and De Leeuw D.M. Charge trapping at the dielectric of organic transistors visualized in real time and space. Adv. Mater. 20 (2008) 975
18. Stallinga P., and Gomes H.L. Modelling electrical characteristics of thin-film field-effect transistors II: effects of traps and impurities. Synth. Met. 156 (2006) 1316
19. Zirkl M., Haase A., Fian A., Schön H., Sommer C., Jakopic G., Leising G., Stadlober B., Graz I., Gaar N., Schwödiauer R., Bauer-Gogonea S., and Bauer S. Low-voltage organic thin film transistors with high-k nanocomposite gate dielectrics for flexible electronics and optothermal sensors. Adv. Mater. 19 (2007) 2241
20. DiCarlo A., Piacenza F., Bolognesi A., Stadlober B., and Maresch H. Influence of grain sizes on the mobility of organic thin-film transistors. Appl. Phys. Lett. 86 (2005) 263501
21. Auner C., Palfinger U., Gold H., Kraxner J., Haase A., Haber T., Sezen M., Grogger W., Jakopic G., Krenn J.R., Leising G., and Stadlober B. Residue-free room temperature UV-nanoimprinting of submicron organic thin film transistors. Org. Electron. 10 (2009) 1466