Pentacene field-effect transistors with sub-10-nm channel lengths

Applied Physics Letters

Volumn 85, Issue 10, 2004, Pages 1772-1774

  Wang, Liang ^a   Fine, Daniel ^a   Jung, Taeho ^a   Basu, Debarshi ^a   Von Seggern, Heinz ^a,b   Dodabalapur, Ananth ^a  

^a The University of Texas at Austin   (United States)

^b DARMSTADT UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BOTTON-CONTACT DEVICES; E-BEAM EVAPORATION; PENTACENE THIN-FILM TRANSISTORS; SEMICONDUCTOR PARAMETER ANALYZERS; SOURCE-DRAIN CURRENTS;

AROMATIC HYDROCARBONS; ELECTRIC CONDUCTIVITY; ELECTRIC CURRENTS; ELECTRODES; ELECTROMIGRATION; ELECTRON BEAMS; ELECTRON MOBILITY; EVAPORATION; FIELD EFFECT TRANSISTORS; GATES (TRANSISTOR); PARAMETER ESTIMATION; SILICA; SUBSTRATES;

THIN FILM TRANSISTORS;

EID: 4944249610     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1790033     Document Type: Article

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