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Volumn 81, Issue 18, 2002, Pages 3488-3490
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On-off switching of edge direct tunneling currents in metal-oxide- semiconductor field-effect transistors
a
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Author keywords
[No Author keywords available]
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Indexed keywords
CONDUCTIVE FILAMENTS;
EDGE-DIRECT TUNNELING;
GATE STACKS;
LOW VOLTAGES;
METAL-OXIDE;
METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR;
N-CHANNEL;
OCCURRENCE PROBABILITY;
RANDOM TELEGRAPH SIGNALS;
SEMICONDUCTOR FIELD-EFFECT TRANSISTORS;
SWITCHING BEHAVIORS;
TERMINAL CURRENTS;
ULTRA-THIN;
DEFECTS;
DIELECTRIC DEVICES;
ELECTRON TUNNELING;
LOGIC GATES;
MOSFET DEVICES;
NITRIDES;
TELEGRAPH;
VANADIUM;
TRANSISTORS;
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EID: 79956050172
PISSN: 00036951
EISSN: None
Source Type: Journal
DOI: 10.1063/1.1518563 Document Type: Article |
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Times cited : (13)
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References (10)
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