Growth and optical properties of catalyst-free InP nanowires on Si (1 0 0) substrates

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 42, Issue 5, 2010, Pages 1540-1543

  Yu, Shuzhen ^a,b   Miao, Guoqing ^a   Jin, Yixin ^a   Zhang, Ligong ^a   Song, Hang ^a   Jiang, Hong ^a   Li, Zhiming ^a   Li, Dabing ^a   Sun, Xiaojuan ^a  

^a CHANGCHUN INSTITUTE OF OPTICS   (China)

^b UNIVERSITY OF CHINESE ACADEMY OF SCIENCES   (China)

Author keywords

Catalyst free; InP; MOCVD; Nanowire

Indexed keywords

ASYMMETRIC BROADENING; BAND GAP ENERGY; BLUE SHIFT; CATALYST-FREE; INP; LASER-INDUCED HEATING; LO PHONONS; METALORGANIC CHEMICAL VAPOR DEPOSITION; MOCVD; PHOTOLUMINESCENCE PEAK; PHOTOLUMINESCENCE SPECTRUM; ROOM TEMPERATURE; SI SUBSTRATES; SI(1 0 0);

CATALYSIS; CATALYSTS; CRYSTAL STRUCTURE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTICAL PROPERTIES; ORGANIC CHEMICALS; PHOTOLUMINESCENCE; SILICON; SUBSTRATES;

NANOWIRES;

EID: 77349099003     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physe.2009.12.040     Document Type: Article

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