Control of stress and crystalline quality in GaInN films used for green emitters

Journal of Crystal Growth

Volumn 310, Issue 23, 2008, Pages 4920-4922

  Iwaya, Motoaki ^a   Miura, Aya ^a   Senda, Ryota ^a   Nagai, Tetsuya ^a   Kawashima, Takeshi ^a   Iida, Daisuke ^a   Kamiyama, Satoshi ^a   Amano, Hiroshi ^a   Akasaki, Isamu ^a  

^a MEIJO UNIVERSITY   (Japan)

Author keywords

A3. Metalorganic vapor phase epitaxy; B1. Gallium compounds; B1. Nitrides; B2. Semiconducting III V materials

Indexed keywords

CRYSTAL GROWTH; GALLIUM COMPOUNDS; GALLIUM NITRIDE; NITRIDES; SEMICONDUCTING GALLIUM; SEMICONDUCTOR GROWTH; SULFUR COMPOUNDS; VAPOR PHASE EPITAXY;

A3. METALORGANIC VAPOR PHASE-EPITAXY; B1. GALLIUM COMPOUNDS; B1. NITRIDES; B2. SEMICONDUCTING III-V MATERIALS; CONTROL OF STRESSES; CRYSTALLINE QUALITIES; GAN TEMPLATES; GREEN EMITTERS; GROWTH TECHNOLOGIES; M PLANES; RECIPROCAL SPACE MAPPINGS; THREADING DISLOCATION DENSITIES; X-RAY DIFFRACTIONS;

FILM GROWTH;

EID: 56249085541     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2008.08.038     Document Type: Article

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