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Volumn 311, Issue 10, 2009, Pages 2929-2932

InGaN growth with various InN mole fractions on m-plane ZnO substrate by metalorganic vapor phase epitaxy

(6) Kawai, Yohjiro a Ohsuka, Shinya a Iwaya, Motoaki a Kamiyama, Satoshi a Amano, Hiroshi a Akasaki, Isamu a

Author keywords

A1. Stresses; A3. Metalorganic vapor phase epitaxy; B1. Gallium compounds; B1. Zinc compounds; B2. Semiconducting III V materials

Indexed keywords

A1. STRESSES; A3. METALORGANIC VAPOR PHASE EPITAXY; B1. GALLIUM COMPOUNDS; B1. ZINC COMPOUNDS; B2. SEMICONDUCTING III-V MATERIALS;

CRYSTAL GROWTH; EPILAYERS; GALLIUM ALLOYS; GALLIUM NITRIDE; METALLORGANIC VAPOR PHASE EPITAXY; SEMICONDUCTING GALLIUM; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR GROWTH; SILICON CARBIDE; SUBSTRATES; TRANSITION METAL COMPOUNDS; VAPORS; ZINC; ZINC OXIDE;

EPITAXIAL GROWTH;

EID: 65749108315 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2009.01.061 Document Type: Article

Times cited : (2)

References (10)

1
- 0001229423
- Takeuchi T., Sota S., Katsuragawa M., Komori M., Takeuchi H., Amano H., and Akasaki I. Jpn. J. Appl. Phys. 36 (1997) L382
- (1997) Jpn. J. Appl. Phys. , vol.36
- Takeuchi, T.¹ Sota, S.² Katsuragawa, M.³ Komori, M.⁴ Takeuchi, H.⁵ Amano, H.⁶ Akasaki, I.⁷

2
- 33745685328
- Kobayashi A., Ohta J., and Fujioka H. J. Appl. Phys. 99 (2006) 123513
- (2006) J. Appl. Phys. , vol.99 , pp. 123513
- Kobayashi, A.¹ Ohta, J.² Fujioka, H.³

3
- 33751096037
- Hamdani F., Yeadon M., Smith D., Tang H., Kim W., Salvador A., Botchkarev A.E., Gibson J.M., Polyakov A.Y., Skowronski M., and Morkoc H. J. Appl. Phys. 83 (1998) 2
- (1998) J. Appl. Phys. , vol.83 , pp. 2
- Hamdani, F.¹ Yeadon, M.² Smith, D.³ Tang, H.⁴ Kim, W.⁵ Salvador, A.⁶ Botchkarev, A.E.⁷ Gibson, J.M.⁸ Polyakov, A.Y.⁹ Skowronski, M.¹⁰ Morkoc, H.¹¹

4
- 0026821780
- Matsuoka T., Yoshimoto N., Sasaki T., and Katsui A. J. Electron. Mater. 21 (1992) 157
- (1992) J. Electron. Mater. , vol.21 , pp. 157
- Matsuoka, T.¹ Yoshimoto, N.² Sasaki, T.³ Katsui, A.⁴

5
- 36649012416
- Wang S., Li N., Park E., Lien S., Feng Z., Valencia A., Nause J., and Ferguson I. J. Appl. Phys. 102 (2007) 106105
- (2007) J. Appl. Phys. , vol.102 , pp. 106105
- Wang, S.¹ Li, N.² Park, E.³ Lien, S.⁴ Feng, Z.⁵ Valencia, A.⁶ Nause, J.⁷ Ferguson, I.⁸

6
- 33746396482
- Kobayashi A., Ohta J., and Fujioka H. Jpn. J. Appl. Phys. 45 (2006) L611
- (2006) Jpn. J. Appl. Phys. , vol.45
- Kobayashi, A.¹ Ohta, J.² Fujioka, H.³

7
- 33846602812
- Graubner S., Neumann C., Volbers N., Meyer B.K., Bläsing J., and Krost A. Appl. Phys. Lett. 90 (2007) 042103
- (2007) Appl. Phys. Lett. , vol.90 , pp. 042103
- Graubner, S.¹ Neumann, C.² Volbers, N.³ Meyer, B.K.⁴ Bläsing, J.⁵ Krost, A.⁶

8
- 65749099771
- Kawai Y., Ohsuka S., Iwaya M., Kamiyama S., Amano H., and Akasaki I. SPIE Photon West 6889 (2008)
- (2008) SPIE Photon West , vol.6889
- Kawai, Y.¹ Ohsuka, S.² Iwaya, M.³ Kamiyama, S.⁴ Amano, H.⁵ Akasaki, I.⁶

9
- 0036002002
- Ogata K., Kawanishi T., Sakurai K., Kim S.W., Maejima K., Fujita Sz., and Fujita Sg. Phys. Status Solidi B 229 (2002) 915
- (2002) Phys. Status Solidi B , vol.229 , pp. 915
- Ogata, K.¹ Kawanishi, T.² Sakurai, K.³ Kim, S.W.⁴ Maejima, K.⁵ Fujita, Sz.⁶ Fujita, Sg.⁷

10
- 0002127437
- Hellman E.S., Buchanan D.N.E., Wiesmann D., and Brener I. MRS Internet J. Nitride Semicond. Res. 1 (1996) 16
- (1996) MRS Internet J. Nitride Semicond. Res. , vol.1 , pp. 16
- Hellman, E.S.¹ Buchanan, D.N.E.² Wiesmann, D.³ Brener, I.⁴

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