Observation of halo implant from the drain side reaching the source side and vice versa in extremely short p-channel transistors

Microelectronics Reliability

Volumn 50, Issue 3, 2010, Pages 346-350

  Lau, W S ^a   Yang, Peizhen ^a   Lim, Eng Hua ^b   Tang, Yee Ling ^b   Lai, Seow Wei ^b   Lo, V L ^b   Siah, S Y ^b   Chan, L ^b  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b CHARTERED SEMICONDUCTOR MANUFACTURING LTD   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

CHANNEL TRANSISTORS; CROSS-OVER; EFFECTIVE CHANNEL LENGTH; GATE ELECTRODES; GATE LENGTH; HALO IMPLANTS; LOOK-AHEAD; MANUFACTURING CONTROL; METAL-OXIDE-SEMICONDUCTOR TRANSISTOR; NMOS TRANSISTORS; OFF-CURRENT; ON-CURRENTS; PMOS TRANSISTORS; STATISTICAL VARIATIONS; TEST STRUCTURE;

DRAIN CURRENT; ELECTRON MOBILITY; HOLE MOBILITY;

TRANSISTORS;

EID: 76849096269     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2009.12.006     Document Type: Article

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