Investigation of Scaling Methodology for Strained Si n-MOSFETs Using a Calibrated Transport Model

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 2003, Pages 475-478

  Nayfeh, Hasan M ^a,b   Hoyt, Judy L ^a   Antoniadis, Dimitri A ^a  

^a USA   (United States)

^b IBM RESEARCH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COULOMB MOBILITY; COULOMB SCATTERING;

BAND STRUCTURE; COMPUTER SIMULATION; DOPING (ADDITIVES); ELECTRIC CURRENTS; ELECTRON MOBILITY; HYDRODYNAMICS; MATHEMATICAL MODELS; POLYSILICON; RELAXATION PROCESSES; SILICA; STRAIN; SUBSTRATES; SURFACE ROUGHNESS; THRESHOLD VOLTAGE;

MOSFET DEVICES;

EID: 0842266600     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (11)

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