Enhanced plasma wave detection of terahertz radiation using multiple high electron-mobility transistors connected in series

IEEE Transactions on Microwave Theory and Techniques

Volumn 58, Issue 2, 2010, Pages 331-339

  Elkhatib, Tamer A ^a   Kachorovskii, Valentin Y ^b   Stillman, William J ^a   Veksler, Dmitry B ^a,c   Salama, Khaled N ^a,d   Zhang, Xi Cheng ^a   Shur, Michael S ^a  

^a RENSSELAER POLYTECHNIC INSTITUTE   (United States)

^b IOFFE INSTITUTE   (Russian Federation)

^c SEMATECH   (United States)

^d KING ABDULLAH UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Saudi Arabia)

Author keywords

High electron mobility transistors (HEMTs); Nonresonant detection; Plasma waves; Room temperature; Series connected transistors; Terahertz

Indexed keywords

DETECTION MECHANISM; EXPERIMENTAL DATA; INGAAS/GAAS; NOISE EQUIVALENT POWER; NON-RESONANT DETECTION; PSEUDOMORPHIC HIGH ELECTRON MOBILITY TRANSISTORS; RESPONSIVITY; ROOM TEMPERATURE; ROOM TEMPERATURE DETECTION; SATURATION REGIME; TERA HERTZ; TERAHERTZ RADIATION; TRANSISTOR CHANNELS;

DRAIN CURRENT; ELECTROMAGNETIC WAVE EMISSION; ELECTRONS; FIELD EFFECT TRANSISTORS; MAGNETOHYDRODYNAMICS; PLASMA WAVES; PLASMAS; TERAHERTZ WAVES;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 76849091672     PISSN: 00189480     EISSN: None     Source Type: Journal    
DOI: 10.1109/TMTT.2009.2037872     Document Type: Article

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