Sub-terahertz testing of silicon MOSFET

Electronics Letters

Volumn 44, Issue 22, 2008, Pages 1325-1327

  Stillman, W ^a   Veksler, D ^a   Elkhatib, T A ^a   Salama, K ^a   Guarin, F ^b   Shur, M S ^a  

^a RENSSELAER POLYTECHNIC INSTITUTE   (United States)

^b IBM MICROELECTRONICS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

LEAKAGE CURRENTS; MOSFET DEVICES; SEMICONDUCTING SILICON; SILICON; TESTING;

COMPLEMENTARY; MOSFETS; SILICON MOSFET; TERAHERTZ; TERAHERTZ RESPONSES; TESTING TECHNIQUES; THRESHOLD CHARACTERISTICS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 54849418733     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20089418     Document Type: Article

References (10)

1. Dyakonov, M., and Shur, M.S.: ' Shallow water analogy for a ballistic field effect transistor: new mechanism of plasma wave generation by DC current ', Phys. Rev. Lett., 1993, 71, p. 2465 0031-9007
2. Dyakonov, M., and Shur, M.S.: ' Detection, mixing, and frequency multiplication of terahertz radiation by two-dimensional electronic fluid ', IEEE Trans. Electron Devices, 1996, 43, p. 380 0018-9383
3. Zanoni, E., Spiazzi, G., Dalla Libera, G., Bonati, B., Muschitiello, M., and Canali, C.: ' Detection and localization of gate oxide shorts in MOS transistors by optical-beam-induced current ', IEEE Trans. Electron Devices, 1991, 38, (2), p. 417-419 10.1109/16.69925 0018-9383
4. Lau, W.S., Chan, D.S.H., Phang, J.C.H., Chow, K.W., Pey, K.S., Lim, Y.P., Sane, V., and Cronquist, B.: ' Quantitative imaging of local defects in very thin silicon dioxide films at low bias voltage by true oxide electron beam induced current ', J. App. Phys., 77, (2), p. 739-746
5. Kiwa, T., Tonouchi, M., Yamashita, M., and Kawase, K.: ' Laser-terahertz emission microscope for inspecting electrical faults in integrated circuits ', Opt. Lett., 2003, 28, (21), p. 2058-2063 10.1364/OL.28.002058 0146-9592
6. Stillman, W., Guarin, F., Kachorovskii, V., Yu Pala, N., Rumyantsev, S., Shur, M.S., and Veksler, D.: ' Nanometer scale complementary silicon MOSFETs as detectors of terahertz and sub-terahertz radiation ', Proc. of IEEE Sensors 2007, Atlanta, CA, USA, October, 2007, p. 934-937
7. Veksler, D., Muraviev, A.V., Elkhatib, T.A., Salama, K.N., and Shur, M.: ' Plasma wave FET for sub-wavelength THz imaging ', Proc. of IEEE ISDRS 2007, College Park, MD, USA, 2007, p. 1-2, FA2-03
8. Knap, W., Kachorovskii, V., Deng, Y., Rumyantsev, S., Lu, J.Q., Gaska, R., Shur, M.S., Simin, G., Hu, X., Asif Khan, M., Saylor, C.A., and Brunel, L.C.: ' Nonresonant detection of terahertz radiation in field effect transistors ', J. Appl. Phys., 91, p. 9346 10.1063/1.1468257 0021-8979
9. Stillman, W., Shur, M.S., Veksler, D., Rumyantsev, S., and Guarin, F.: ' Device loading effects on nonresonant detection of terahertz radiation by silicon MOSFETs ', Electron. Lett., 2007, 43, p. 422-423 10.1049/el:20073475 0013-5194
10. Stillman, W.: ' Silicon CMOS FETs as terahertz and sub-terahertz detectors ', 2008, Doctoral, Rensselaer Polytechnic Institute, Troy, NY