Millimeter wave emission from GaN high electron mobility transistor

Applied Physics Letters

Volumn 84, Issue 1, 2004, Pages 70-72

  Deng, Yanqing ^a   Kersting, Roland ^a   Xu, Jingzhou ^a   Ascazubi, Ricardo ^a   Zhang, Xi Cheng ^a   Shur, Michael S ^a   Gaska, Remis ^b   Simin, Grigory S ^c   Asif Khan, M ^c   Ryzhii, Victor ^d  

^a RENSSELAER POLYTECHNIC INSTITUTE   (United States)

^b SENSOR ELECTRONIC TECHNOLOGY INC   (United States)

^c University of South Carolina   (United States)

^d UNIVERSITY OF AIZU   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONIC CHARGES; PLASMA FREQUENCIES;

APPROXIMATION THEORY; CURRENT VOLTAGE CHARACTERISTICS; ELECTROMAGNETIC WAVE EMISSION; FABRY-PEROT INTERFEROMETERS; FREQUENCIES; HIGH ELECTRON MOBILITY TRANSISTORS; LOW TEMPERATURE PHENOMENA; MILLIMETER WAVES; OSCILLATIONS; PLASMA WAVES; SATURATION (MATERIALS COMPOSITION); SUBSTRATES; VELOCITY MEASUREMENT; VOLTAGE MEASUREMENT;

GALLIUM NITRIDE;

EID: 0942278259     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1638625     Document Type: Article

References (17)

1. A. V. Chaplik, Zh. Eksp. Teor. Fiz. 62, 746 (1972) [Sov. Phys. JETP 35, 395 (1972)].
2. A. V. Chaplik, Zh. Eksp. Teor. Fiz. 62, 746 (1972) [Sov. Phys. JETP 35, 395 (1972)].
3. M. Dyakonov and M. S. Shur, Phys. Rev. Lett. 71, 2465 (1993).
4. M. Dyakonov and M. S. Shur, in Terahertz Sources and Systems, edited by R. E. Miles (Kluwer-Academic, Dordrecht, The Netherlands, 2001), pp. 187-207.
5. M. Dyakonov and M. S. Shur, Phys. Rev. Lett. 71, 2465 (1993); M. Dyakonov and M. S. Shur, IEEE Trans. Electron Devices 43, 380 (1996).
6. M. Dyakonov and M. S. Shur, Phys. Rev. Lett. 71, 2465 (1993); M. Dyakonov and M. S. Shur, IEEE Trans. Electron Devices 43, 380 (1996).
7. W. Knap, Y. Deng, S. Rumyantsev, J.-Q. Lu, M. S. Shur, C. A. Saylor, and L. C. Brunel, Appl. Phys. Lett. 80, 3433 (2002).
8. W. Knap, Y. Deng, S. Rumyantsev, and M. S. Shur, Appl. Phys. Lett. 81, 4637 (2002).
9. X. G. Peralta, S. J. Allen, M. C. Wanke, N. E. Harff, J. A. Simmons, M. P. Lilly, J. L. Reno, P. J. Burke, and J. P. Eisenstein, Appl. Phys. Lett. 81, 1627 (2002).
10. A. A. Kastalsky and M. S. Shur, Solid State Commun. 39, 715 (1981).
11. M. Dyakonov and M. S. Shur, Ballistic Transport, in High Mobility Semiconductor, The Physics of Semiconductors, edited by M. Scheffler and R. Zimmermann (World Scientific, Singapore, 1996), pp. 145-148.
12. M. S. Shur, IEEE Electron Device Lett. 23, 511 (2002).
13. A. Koudymov, G. Simin, M. Asif Khan, A. Tarakji, M. Shur, and R. Gaska, IEEE Electron Device Lett. 24, 680 (2003).
14. Y. Deng, R. Kersting, V. Roytburd, J. Xu, R. Ascazubi, K. Liu, X.-C. Zhang, and M. S. Shur, IEEE Trans. Microwave Theory Tech. (submitted).
15. A. Satou, I. Khmyrova, V. Ryzhii, and M. S. Shur, Semicond. Sci. Technol. 18, 460 (2003).
16. U. V. Bhapkar and M. S. Shur, J. Appl. Phys. 82, 1649 (1997).
17. E. Frayssinet, W. Knap, P. Lorenzini, N. Grandjean, J. Massies, C. Skierbiszewski, T. Suski, I. Grzegory, S. Porowski, G. Simin, X. Hu, M. Asif Khan, M. Shur, R. Gaska, and D. Maude, Appl. Phys. Lett. 77, 2551 (2000).