Enhanced terahertz detection using multiple GaAs HEMTs connected in series

IEEE MTT-S International Microwave Symposium Digest

Volumn , Issue , 2009, Pages 937-940

  Elkhatib, Tamer A ^a   Veksler, Dmitry B ^a   Salama, Khaled N ^b   Zhang, Xi C ^a   Shur, Michael S ^a  

^a RENSSELAER POLYTECHNIC INSTITUTE   (United States)

^b KING ABDULLAH UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Saudi Arabia)

Author keywords

GaAs HEMTs; Plasma waves; Room temperature; Series transistors; Short channel; Terahertz detection

Indexed keywords

GAAS; GAAS HEMTS; ROOM TEMPERATURE; SHORT CHANNELS; TERAHERTZ DETECTION;

DRAIN CURRENT; FIELD EFFECT TRANSISTORS; GALLIUM ALLOYS; GALLIUM ARSENIDE; HIGH ELECTRON MOBILITY TRANSISTORS; INSULATING MATERIALS; MAGNETOHYDRODYNAMICS; MICROWAVES; PLASMA WAVES; SEMICONDUCTING GALLIUM; TERAHERTZ WAVES;

TERAHERTZ WAVE DETECTORS;

EID: 76849117141     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/MWSYM.2009.5165852     Document Type: Conference Paper

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