High aspect ratio silicon nanowire for stiction immune gate-all-around MOSFETs

IEEE Electron Device Letters

Volumn 30, Issue 8, 2009, Pages 864-866

  Han, Jin Woo ^a   Moon, Dong Il ^a   Choi, Yang Kyu ^a  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

Author keywords

3 D; Epitaxial growth; Gate all around (GAA); Nanowire; Stiction free

Indexed keywords

3-D; BULK SUBSTRATES; CMOS-COMPATIBLE TECHNOLOGY; DRIVE CURRENTS; EPITAXIALLY GROWN; GATE ALL AROUND (GAA); GATE-ALL-AROUND; GATE-ALL-AROUND MOSFET; HIGH ASPECT RATIO; HIGH ASPECT RATIO STRUCTURES; MOSFETS; NANOWIRE STRUCTURES; SACRIFICIAL LAYER; SHORT-CHANNEL EFFECT; SI FILMS; SILICON NANOWIRES;

ASPECT RATIO; EPITAXIAL GROWTH; MOLECULAR BEAM EPITAXY; MOSFET DEVICES; NANOWIRES; PHOTORESISTS; PRESSURE DROP; STICTION; THREE DIMENSIONAL;

GALLIUM ALLOYS;

EID: 68249143293     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2009.2024178     Document Type: Article

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