Horizontal position analysis of single acceptors in Si nanoscale field-effect transistors

Applied Physics Letters

Volumn 94, Issue 22, 2009, Pages

  Khalafalla, M A H ^a   Ono, Y ^a   Nishiguchi, K ^a   Fujiwara, A ^a  

^a Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CONDUCTANCE MEASUREMENT; DRAIN TERMINALS; NANOSCALE FIELD-EFFECT TRANSISTORS; POSITION ANALYSIS; SILICON ON INSULATOR; SUBTHRESHOLD;

BORON; BORON COMPOUNDS; NANOSTRUCTURED MATERIALS;

FIELD EFFECT TRANSISTORS;

EID: 66749130717     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3147209     Document Type: Article

References (14)

1. S. Roy and A. Asenov, Science 0036-8075 309, 388 (2005).
2. B. E. Kane, Nature (London) 0028-0836 393, 133 (1998). 10.1038/30156
3. R. G. Clark, R. Brenner, T. M. Buehler,: V. Chan, N. J. Curson, A. S. Dzurak, E. Gauja, H.-S. Goan, A. D. Greentree, T. Hallam, A. R. Hamilton, L. C. L. Hollenberg, D. N. Jamieson, J. C. McCallum,: G. J. Milburn, J. L. O'Brien,: L. Oberbeck, C. I. Pakes, S. Prawer, D. J. Reilly, F. J. Ruess, S. R. Schofield, M. Y. Simmons, F. E. Stanley, R. P. Starrett, C. Wellard, and C. Yang, Philos. Trans. R. Soc. London, Ser. A 0962-8428 361, 1451 (2003). 10.1098/rsta.2003.1221
4. G. Mil'nikov, N. Mori, Y. Kamakura, and T. Ezaki, Phys. Rev. Lett. 0031-9007 102, 036801 (2009). 10.1103/PhysRevLett.102.036801
5. H. Sellier, G. P. Lansbergen, J. Caro, S. Rogge, N. Collaert, I. Ferain, M. Jurczak, and S. Biesemans, Phys. Rev. Lett. 0031-9007 97, 206805 (2006). 10.1103/PhysRevLett.97.206805
6. Y. Ono, K. Nishiguchi, A. Fujiwara, H. Yamaguchi, H. Inokawa, and Y. Takahashi, Appl. Phys. Lett. 0003-6951 90, 102106 (2007). 10.1063/1.2679254
7. M. Kawachi, Y. Ono, A. Fujiwara, and S. Horiguchi (unpublished).
8. M. A. H. Khalafalla, Y. Ono, K. Nishiguchi, and A. Fujiwara, Appl. Phys. Lett. 0003-6951 91, 263513 (2007). 10.1063/1.2824579
9. L. E. Calvet, R. G. Wheeler, and M. A. Reed, Phys. Rev. Lett. 0031-9007 98, 096805 (2007). 10.1103/PhysRevLett.98.096805
10. G. P. Lansbergen, R. Rahman, C. J. Wellard, I. Woo, J. Caro, N. Collaert, S. Biesemans, G. Klimeck, L. C. L. Hollenberg, and S. Rogge, Nat. Phys. 1745-2473 4, 656 (2008). 10.1038/nphys994
11. L. E. Calvet, J. P. Snyder, and W. Wernsdorfer, Phys. Rev. B 0163-1829 78, 195309 (2008). 10.1103/PhysRevB.78.195309
12. Y. Ono, M. A. H. Khalafalla, K. Nishiguchi, K. Takashina, A. Fujiwara, S. Horiguchi, H. Inokawa, and Y. Takahashi, Appl. Surf. Sci. 0169-4332 254, 6252 (2008). 10.1016/j.apsusc.2008.02.161
13. M. Lundstrom and J. Guo, Nanoscale Transistors: Device Physics, Modeling and Simulation (Springer, New York, 2006).
14. W. G. van der Wiel, S. De Franceschi, J. M. Elzerman, T. Fujisawa, S. Tarucha, and L. P. Kouwenhoven, Rev. Mod. Phys. 0034-6861 75, 1 (2002). 10.1103/RevModPhys.75.1